发明名称 Integrated circuit dielectric and method
摘要 A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).
申请公布号 US6008540(A) 申请公布日期 1999.12.28
申请号 US19980087458 申请日期 1998.05.28
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 LU, JIONG-PING;JIN, CHANGMING
分类号 H01L21/3105;H01L21/314;H01L21/316;H01L21/762;H01L21/768;H01L23/29;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/58;H01L47/00 主分类号 H01L21/3105
代理机构 代理人
主权项
地址