发明名称 |
LOW POWER SENSE AMPLIFIER FOR MEMORY |
摘要 |
PURPOSE: A memory sense amplifier is provided to save power consumption by outputting and passing a signal generated from a first terminal to a trip circuit after fully amplifying the signal. CONSTITUTION: The sense amplifier includes a differential amplifier for outputting a feeble voltage signal connected with a bit line coupled to a memory cell after sensing and amplifying the voltage signal and a latch amplifier for storing inputted data, wherein the differential amplifier is coupled to a bit line signal and the latch amplifier is operated by an output signal of the differential amplifier. A bias and a breaker are installed in the sense amplifier. The bias is composed of a transistor supplying a source of load resistance for driving the differential amplifier, and the breaker powers off the transistor to power off driving of the differential amplifier.
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申请公布号 |
KR20000009772(A) |
申请公布日期 |
2000.02.15 |
申请号 |
KR19980030406 |
申请日期 |
1998.07.28 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
YANG, JEONG SIK;KIM. BEOM SEOP |
分类号 |
G11C7/06;H03K3/012;H03K3/356;(IPC1-7):G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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