发明名称 LOW POWER SENSE AMPLIFIER FOR MEMORY
摘要 PURPOSE: A memory sense amplifier is provided to save power consumption by outputting and passing a signal generated from a first terminal to a trip circuit after fully amplifying the signal. CONSTITUTION: The sense amplifier includes a differential amplifier for outputting a feeble voltage signal connected with a bit line coupled to a memory cell after sensing and amplifying the voltage signal and a latch amplifier for storing inputted data, wherein the differential amplifier is coupled to a bit line signal and the latch amplifier is operated by an output signal of the differential amplifier. A bias and a breaker are installed in the sense amplifier. The bias is composed of a transistor supplying a source of load resistance for driving the differential amplifier, and the breaker powers off the transistor to power off driving of the differential amplifier.
申请公布号 KR20000009772(A) 申请公布日期 2000.02.15
申请号 KR19980030406 申请日期 1998.07.28
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 YANG, JEONG SIK;KIM. BEOM SEOP
分类号 G11C7/06;H03K3/012;H03K3/356;(IPC1-7):G11C7/06 主分类号 G11C7/06
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