Einrichtung zur Bildung einer Dünnschicht aus Oxydverbundsupraleiter,申请号DE19916032079-传众专利搜索

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发明名称	Einrichtung zur Bildung einer Dünnschicht aus Oxydverbundsupraleiter
摘要
申请公布号	DE69132079(D1)	申请公布日期	2000.05.04
申请号	DE19916032079	申请日期	1991.08.01
申请人	SUMITOMO ELECTRIC INDUSTRIES, LTD.	发明人	NAKANISHI, HIDENORI;TANAKA, SABURO;ITOZAKI, HIDEO;YAZU, SHUJI
分类号	C01B13/14;C01G1/00;C23C14/28;C30B29/22;H01L39/24;(IPC1-7):H01L39/24	主分类号	C01B13/14
代理机构		代理人
主权项
地址

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