发明名称 SECONDARY ELECTRON MEASURING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a secondary electron measuring device, in which a secondary electron emitting coefficient of an insulating material is measured within a range where the insulating material never undergoes dielectric breakdown. SOLUTION: A secondary electron measuring device comprises: an ion gun 1 for applying an accelerating voltage so as to irradiate an ion according to an ion current; a target 3 arranged thereon an object to be measured to be irradiated with the ion by the ion gun 1; a target ammeter 3a for measuring a current flowing in the target 3; a collector for catching an electron emitted from the object to be measured; a collector ammeter 5a for measuring a current flowing in the collector 5; and a controller for controlling an ion irradiating time by the ion gun 1 to be equal to or smaller thanεε0SV/ti (whereinεrepresents a dielectric constant of the object to be measured;ε0, a dielectric constant in vacuum; S, an ion irradiating area; t, a thickness of the object to be measured; V, an accelerating voltage value; and I, an ion current).</p>
申请公布号 JP2000182559(A) 申请公布日期 2000.06.30
申请号 JP19980360872 申请日期 1998.12.18
申请人 FUJITSU LTD 发明人 ISHIMOTO MANABU;HIDAKA SOICHIRO
分类号 H01J37/252;G01N23/225;(IPC1-7):H01J37/252 主分类号 H01J37/252
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