A semiconductor device having a drift region

摘要

A semiconductor device having a first conductive type drain region (29) and a drift region comprising plural first conductive type drift path regions (1) which are alternate with second conductive type compartment regions (2). A second conductive type well (27) is located at the opposite end of the drift region and extends over a plurality of the p-n junctions (jb) which are formed between the drift path regions and compartment regions.