Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant

摘要

A method of manufacturing a low-k semiconductor structure including the steps of forming a low-k dielectric layer, forming a sacrificial etch stop layer adjacent the low-k dielectric layer, and applying energy to the sacrificial etch stop layer to diffuse a component of the sacrificial etch stop layer into the adjacent low-k dielectric layer. This diffusion of the component lowers the dielectric constant of the adjacent low-k dielectric layer.