发明名称 Surface acoustic wave device
摘要 A surface acoustic wave device comprising a substrate having a piezoelectric function on a surface thereof, and an electrode film having a four-layer structure comprising, from underneath, a first layer comprising Ti, a second layer comprising Al or an Al alloy, a third layer comprising an intermetallic compound, a silicide or a CuAl2, and a fourth layer comprising Al or an Al alloy on the substrate.
申请公布号 US6486591(B2) 申请公布日期 2002.11.26
申请号 US20010884996 申请日期 2001.06.21
申请人 FUJITSU MEDIA DEVICES LIMITED;FUJITSU LIMITED 发明人 NISHIHARA TOKIHIRO
分类号 H03H9/145;H03H9/00;H03H9/25;(IPC1-7):H01L41/08 主分类号 H03H9/145
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