THIN FILM TRANSISTOR, TFT SUBSTRATE, LIQUID CRYSTAL DISPLAY, AND METHOD FOR MANUFACTURING TFT

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which can control deterioration of properties due to electric impacts on a conductive film with reducing light leakage current.

SOLUTION: A light shielding film 3 having conductivity is formed under an active layer 7 of the TFT to shield the light entering the active layer 7. A trapping level is introduced by density of 5×1012/cm2or more into a source region 8 and a drain region 9 on the surface on the light shielding film 3 side of the active layer 7 by passing electric current and applying electric stress in an insulation film 4 between the light shielding film 3 and a source electrode 15 or a drain electrode 16.

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