发明名称 Process for producing photomasks for making semi-conductor patterns
摘要 Masks are produced for the fabrication of semiconductor structures based on layout data that has information for defining a mask layout with individual geometric structure elements. Layout data generated previously for a mask layout is checked to see whether geometric design requirements are satisfied. In the event of a violation of design requirements, the corresponding error locations in the mask layout are located. Further layout data are then generated, which contain information for defining correction figures to correct the respective error locations. The further layout data are linked with the layout data, so that the layout data are modified. This permits automated modification of the layout data and their technology-dependent optimization.
申请公布号 EP1146393(A3) 申请公布日期 2005.07.20
申请号 EP20010107628 申请日期 2001.03.27
申请人 INFINEON TECHNOLOGIES AG 发明人 FISCHER, WERNER;LUDWIG, BURKHARD;MEYER, DIRK;THIELE, JOERG
分类号 G03F1/00;G06F17/50 主分类号 G03F1/00
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