发明名称 MULTI-VALUED SEMICONDUCTOR MEMORY AND READ METHOD THEREFROM, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To efficiently perform error correction even if multi-value information stored in a multi-value memory cell is lost. SOLUTION: A memory cell array 1 of a multi-value semiconductor memory provided with a plurality of multi-value memory cells holding memory states of three or more, is further provided with a bit information distribution means 6a in which each bit constituting one code word encoded by an arbitrary encoding method is distributed to a plurality of multi-value memory cells and is stored, even if errors are caused in a plurality of bits stored in one multi-value memory cell, only information of the minimum number of bits in which error correction can be performed is lost as for one code word. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005235391(A) 申请公布日期 2005.09.02
申请号 JP20050126974 申请日期 2005.04.25
申请人 NIPPON STEEL CORP 发明人 HAZAMA KATSUKI
分类号 G11C16/02;G11C16/06;(IPC1-7):G11C16/02 主分类号 G11C16/02
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