Planar semiconductor structure e.g. ion sensitive field effect transistor structure, has chemically active, geometrically and spatially very small areas i.e. nano-spots, that are embedded in chemically inactive surface

摘要

The structure has passivated contacts and a chemically inert surface, which is in direct contact for a surrounding medium (14) such as fluid or gas. Chemically active, geometrically and spatially very small areas i.e. nano-spots (12), are embedded in a chemically inactive surface. The chemically inert surface includes a potential window for elimination of water electrolysis. The chemically inert surface is highly temperature stable in a gaseous phase.