发明名称 Dynamic pre-charge level control in semiconductor devices
摘要 Dynamic control of a pre-charge level particularly for memory cells is described. In one example, a circuit block has pre-charge node and a power supply is coupled to the pre-charge node to provide either a first power level or a second power level when the circuit block is not active. The first power level may be a pre-charge mode power level and the second power level may be a sleep mode power level.
申请公布号 US7272061(B2) 申请公布日期 2007.09.18
申请号 US20050041345 申请日期 2005.01.24
申请人 INTEL CORPORATION 发明人 SALEH HUGO
分类号 G11C7/00 主分类号 G11C7/00
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