| 摘要 |
A method for manufacturing a contact plug of a semiconductor device is provided to prevent the generation of voids in a contact plug and to reduce the resistance of the contact plug. An interlayer dielectric is formed on a semiconductor substrate(31). A contact hole is formed on the resultant structure by etching selectively the interlayer dielectric. A first conductive layer(38A) is formed on the resultant structure to fill the contact hole. The first conductive layer is etched to expose a void of the first conductive layer itself to the outside. A second conductive layer(39A) is formed on the resultant structure to fill the exposed void of the first conductive layer. A third conductive layer(40A) is formed on the second conductive layer. Then, the second and the third conductive layers are selectively etched.
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