发明名称 Passivative chemical mechanical polishing composition for copper film planarization
摘要 A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu<SUP>2+</SUP>, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
申请公布号 US7300601(B2) 申请公布日期 2007.11.27
申请号 US20020315641 申请日期 2002.12.10
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 LIU JUN;WRSCHKA PETER;BERNHARD DAVID;KING MACKENZIE;DARSILLO MICHAEL;BOGGS KARL
分类号 C09K13/00;C09G1/02;C09K13/04;C09K13/06;C23F3/00;H01L21/302;H01L21/321 主分类号 C09K13/00
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