STRUCTURE AND METHOD FOR MANUFACTURING NON VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a nonvolatile memory device and a structure thereof are provided to reduce a contact area of a tunnel oxide layer and a semiconductor substrate by etching the semiconductor substrate on which a gate pattern is formed to fabricate a trench between adjacent gate patterns. A laminated material layer is formed on an upper portion of a semiconductor substrate(100). The laminated material is etched to form a gate pattern. An isotropic etching process is performed on the semiconductor substrate by using the gate pattern as a self-aligned etching mask. An anisotropic etching process is performed on the semiconductor substrate of which the isotropic etching process is completed by using the gate pattern as a self-aligned etching mask to form a trench between adjacent gate patterns. The laminated material layer is a layer on which a silicon oxide layer(102), a first polysilicon layer(104), an ONO(Oxide-Nitride-Oxide) layer(106) and on second polysilicon layer are sequentially laminated on an upper portion of the semiconductor substrate.