发明名称 Nonvolatile memory devices, memory systems, and control methods using simultaneous recovery and output operations
摘要 A nonvolatile memory device includes a cell array including a plurality of cell strings extending on a substrate in a vertical direction, a page buffer connected to a plurality of bit lines and configured to store sensing data of the cell array in a sensing operation, a voltage generator configured to provide voltages to a plurality of word lines and the plurality of bit lines, and an input/output buffer configured to temporarily store the sensing data received in a data dump from the page buffer and to output the temporarily stored data to an external device. The nonvolatile memory device further includes control logic configured to set a status of the nonvolatile memory device to a ready state after the sensing data is dumped to the input/output buffer and before recovery of the cell array from a bias voltage of the sensing operation is complete.
申请公布号 US9368166(B2) 申请公布日期 2016.06.14
申请号 US201414153627 申请日期 2014.01.13
申请人 Samsung Electronics Co., Ltd. 发明人 Kwak Donghun;Yoon Hyun Jun;Shim Dongkyo
分类号 G11C7/10;G11C16/26;G11C16/04 主分类号 G11C7/10
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A nonvolatile memory device, comprising: a cell array including a plurality of cell strings extending on a substrate in a vertical direction, memory cells in each of the cell strings being controlled by a plurality of word lines and a plurality of bit lines; a page buffer connected to the plurality of bit lines and configured to store sensing data of the cell array in a sensing operation; a voltage generator configured to apply a bias voltage to at least one of the plurality of word lines and the plurality of bit lines prior to the sensing operation and to enable execution of the sensing operation; an input/output buffer configured to output the sensing data to an external device before completion of a recovery operation, in which the bias voltage applied to the at least one of the plurality of word lines and plurality of bit lines for the sensing operation is discharged; and a control logic configured to set a status of the nonvolatile memory device to a ready state before the recovery operation of the cell array from the applied bias voltage of the sensing operation is completed, wherein: the control logic is configured to provide the page buffer with a dump signal such that the sensing data is dumped from the page buffer to the input/output buffer, and the control logic comprises a status generator configured to set the status to the ready state in response to the dump signal.
地址 Suwon-si, Gyeonggi-do KR