| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor amplifier having a high power addition efficiency.SOLUTION: A high frequency semiconductor amplifier comprises an input terminal to which a signal is input, a high frequency semiconductor amplification element for amplifying the signal, and an output matching circuit connected to the high frequency semiconductor amplification element. The output matching circuit has a first transmission line having an electrical length ranging from 72 degrees to 108 degrees, a second transmission line which is connected to the first transmission line and has an electrical length ranging from 72 degrees to 108 degrees, a third transmission line which is connected to the second transmission line and has an electrical length ranging from 24 degrees to 36 degrees, a fourth transmission line which is connected to the third transmission line and has an electrical length ranging from 12 degrees to 18 degrees, a fifth transmission line which is connected to the fourth transmission line and has an electrical length ranging from 12 degrees to 18 degrees, and a bonding wire connected between the fifth transmission line and the high frequency semiconductor amplification element.SELECTED DRAWING: Figure 1 |
