发明名称 Solid-state imaging device and imaging apparatus
摘要 A solid-state imaging device according to the present disclosure includes: a pixel unit in which unit pixels are arranged two-dimensionally, each of the unit pixels including: a photodiode which stores signal charges; a transfer transistor for transferring the signal charges stored in the photodiode; a charge detection unit which temporarily stores the transferred signal charges; and a reset transistor for resetting the signal charges stored in the charge detection unit; and a vertical scanning unit which drives the pixel unit, the vertical scanning unit including: a row selection unit; a level shift circuit for converting a level of an externally inputted power supply voltage; and a buffer circuit for buffering a voltage whose level has been converted by the level shift circuit, the level shift circuit including: a step-down level shift circuit; and a step-up level shift circuit isolated from the step-down level shift circuit by a well.
申请公布号 US9413994(B2) 申请公布日期 2016.08.09
申请号 US201414299345 申请日期 2014.06.09
申请人 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. 发明人 Shimizu Yusuke
分类号 H04N5/376;H04N5/357;H04N5/369;H03K19/0175;H04N5/372 主分类号 H04N5/376
代理机构 Wenderoth, Lind & Ponack, L.L.P. 代理人 Wenderoth, Lind & Ponack, L.L.P.
主权项 1. A solid-state imaging device comprising: a pixel unit in which unit pixels are arranged in rows and columns on a semiconductor substrate, each of the unit pixels including, on the semiconductor substrate:a receiving unit configured to store signal charges obtained by photoelectrically converting incident light;a transfer transistor for transferring the signal charges stored in the receiving unit, in accordance with a pulse signal applied to a gate electrode of the transfer transistor;a charge detection unit configured to temporarily store the transferred signal charges; anda reset transistor for resetting the signal charges stored in the charge detection unit, in accordance with a pulse signal applied to a gate electrode of the reset transistor; and a vertical scanning unit formed in and on the semiconductor substrate configured to drive the pixel unit by supplying the pulse signal to the pixel unit, the vertical scanning unit including:a row selection unit configured to select one of the rows of the unit pixels;at least one level shift circuit for converting a level of an externally inputted power supply voltage, the level being a single voltage level; andat least one buffer circuit for buffering a voltage whose level has been converted by the at least one level shift circuit, and transferring the buffered voltage as the pulse signal to the pixel unit,each of the at least one level shift circuit including:a step-down level shift circuit which steps down an externally inputted power supply voltage; anda step-up level shift circuit which is isolated from the step-down level shift circuit by a well, and steps up an externally inputted power supply voltage.
地址 Osaka JP