发明名称 Power sequencing for embedded flash memory devices
摘要 A system and method for improved power sequencing within an embedded flash memory device is disclosed.
申请公布号 US9417675(B2) 申请公布日期 2016.08.16
申请号 US201414290779 申请日期 2014.05.29
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 Tran Hieu Van;Vu Thuan;Ly Anh;Nguyen Hung Quoc
分类号 G11C5/14;G06F1/26;G06F1/28;G11C7/20;G11C16/30;G11C11/4074 主分类号 G11C5/14
代理机构 DLA Piper LLP US 代理人 Yamashita Brent;DLA Piper LLP US
主权项 1. A power management unit comprising a first voltage source, a second voltage source, and a third voltage source configured to perform a power-on sequence, wherein: during a first time period, the voltage output from the first voltage source ramps upward, the voltage output from the second voltage source remains at a constant level, and the voltage output from the third voltage source remains at a constant level; during a second time period immediately following the first time period, the voltage output from the first voltage source remains at a constant level, the voltage output from the second voltage source remains at a constant level, and the voltage output from the third voltage source remains at a constant level; during a third time period immediately following the second time period, the voltage output from the first voltage source remains at a constant level, the voltage output from the second voltage source ramps upward, and the voltage output from the third voltage source remains at a constant level; during a fourth time period immediately following the third time period, the voltage output from the first voltage source remains at a constant level, the voltage output from the second voltage source remains at a constant level, and the voltage output from the third voltage source remains at a constant level; and during a fifth time period immediately following the fourth time period, the voltage output from the first voltage source remains at a constant level, the voltage output from the second voltage source remains at a constant level, and the voltage output from the third voltage source ramps upward.
地址 San Jose CA US