发明名称 |
Target for magnetron sputtering |
摘要 |
A target for magnetron sputtering, comprising metal Co, metal Cr, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being less than 25 at %, wherein the target comprises: a non-magnetic metal phase containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; and a magnetic metal phase containing metal Co, wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less, and wherein the non-magnetic metal phase and the oxide are mutually dispersed. |
申请公布号 |
US9435024(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201514677013 |
申请日期 |
2015.04.02 |
申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
Goto Yasuyuki;Watanabe Yasunobu;Kobayashi Yusuke |
分类号 |
C23C14/35;H01J37/34;C23C14/34;B22F3/15;C22C1/05;C22C5/04;C22C19/07;G11B5/851;C22C1/04;C22C32/00;B22F3/14;B22F5/00 |
主分类号 |
C23C14/35 |
代理机构 |
Orrick, Herrington & Sutcliffe LLP |
代理人 |
Orrick, Herrington & Sutcliffe LLP |
主权项 |
1. A target for magnetron sputtering, comprising metal Co, metal Cr, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being more than 0 at % and less than 25 at %,
wherein the target comprises:
a non-magnetic metal phase containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and less than 100 at % and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; anda magnetic metal phase containing metal Co; wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less; wherein the non-magnetic metal phase and the oxide are mutually dispersed to form a matrix phase, and wherein the magnetic metal phase is dispersed in the matrix phase. |
地址 |
Tokyo JP |