| 摘要 |
This process includes the step of a) providing a semiconductor substrate (1) having a first surface (10) and an opposite second surface (11), the substrate (1) including a first semiconductor zone (100) containing boron atoms, the first semiconductor zone (100) being intended to make contact with an electrode (E), the process being noteworthy in that it includes the steps of b) forming a dielectric layer (2) on the second surface (11) of the substrate (1), the dielectric layer (2) including phosphorus or arsenic atoms, and c) applying a thermal anneal suitable for diffusing the phosphorus or arsenic atoms from the dielectric layer (2) as far as the second surface (11) of the substrate (1) so as to form a second semiconductor zone (110) intended to make contact with an electrode (E), and to form a thermal oxide layer (3) on the first surface (10) of the substrate (1). |
