Under-spacer doping in fin-based semiconductor devices

摘要

A fin field effect transistor (FinFET) device and a method of fabricating the FinFET are described. The device includes a fin formed on a substrate, the fin including a channel region of the device and a spacer and a cap formed over a dummy gate line separating a source and drain of the device. The device also includes an epitaxial layer formed over portions of the fin, the epitaxial layer being included between the fin and the spacer.

主权项

1. A fin field effect transistor (FinFET) device, comprising:
a fin formed on a substrate, the fin including a channel region of the device; a spacer and a cap formed over a dummy gate line separating a source and drain of the device; an epitaxial layer formed over portions of the fin, the epitaxial layer being included between the fin and the spacer, wherein the epitaxial layer between the fin and the spacer is formed in a stepped arrangement; and wherein the stepped arrangement is characterized by two or more flat edges that are substantially parallel to the substrate and that are not coplanar.