发明名称 Image sensor pixel cell with switched deep trench isolation structure
摘要 A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
申请公布号 US9496304(B2) 申请公布日期 2016.11.15
申请号 US201514704493 申请日期 2015.05.05
申请人 OmniVision Technologies, Inc. 发明人 Hu Sing-Chung;Yang Rongsheng;Chen Gang;Rhodes Howard E.;Manabe Sohei;Tai Dyson H.
分类号 H01L29/66;H01L27/146;H04N5/378 主分类号 H01L29/66
代理机构 Blakely Sokoloff Taylor & Zafman LLP 代理人 Blakely Sokoloff Taylor & Zafman LLP
主权项 1. A pixel cell, comprising: a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge; a floating diffusion disposed in a well region disposed in the epitaxial layer in the first region of the semiconductor material; a transfer transistor disposed in the first region of the semiconductor material and coupled between the photodiode and the floating diffusion to selectively transfer the image charge from the photodiode to the floating diffusion; and a deep trench isolation (DTI) structure disposed in the semiconductor material, wherein the DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure, wherein the DTI structure includes a doped semiconductor material disposed inside the DTI structure, wherein the doped semiconductor material disposed inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
地址 Santa Clara CA US