| 摘要 |
Provided is a compound semiconductor device having a structure suitable for high integration. The compound semiconductor device is provided with a first semiconductor package, and a second semiconductor package laminated on the first semiconductor package. The first semiconductor package has: a first substrate including a wiring layer; a rigid plate, which is laminated on the first substrate, and includes a first opening and a second opening, which penetrate the rigid plate in the laminating direction; a first semiconductor chip formed on the first substrate, said first semiconductor chip being in a region inside of the first opening; and a solder layer formed on the first substrate, said solder layer being in a region inside of the second opening. The second semiconductor package has: a second substrate including a terminal section connected to the solder layer; and a second semiconductor chip formed on the second substrate. |
