BONDING WIRE FOR SEMICONDUCTOR DEVICE

摘要

Provided is a bonding wire for a semiconductor device, said bonding wire having a Cu alloy core and a Pd coating layer formed on the surface of the Cu alloy core, and being characterized by including an element that imparts connection reliability in a high-temperature environment, wherein the proof stress ratio, as defined by formula (1), is 1.1-1.6. (1) Proof stress ratio = maximum proof stress / 0.2% proof stress.