| 摘要 |
PURPOSE:To enable to form a memory cell having high performance with a small area by a method wherein a thermal nitride film being able to be formed stably in a thin film is formed on an Si substrate to form capacity. CONSTITUTION:After an oxide film 102 is formed selectively on the Si substrate 101, it is thermally oxidized directly, and the Si nitride film 103 is adhered. The first polycrystalline Si layer 104 is formed thereon, and after it is processed to form the desired shape, thermal oxidation is performed. After then, only the part of the film 103 is exposed, and the film 103 is etched. Thermal oxidation is performed moreover, and after an Si oxide film is formed, the second polycrystal line Si layer 106 is adhered. Then a diffusion layer 109, an interlayer insulating film 108, an Al layer 109, and a passivation film 110 are formed. Capacity of the dynamic memory formed by this way is enlarged by several times by using the stable thermal nitride film having higher permittivity than a thermal oxide film and moreover having little pin hole, and reduction of volume of the dynamic memory cell can be attained. |
