| 摘要 |
PURPOSE:To remove residue in a semiconductor device by cleaning the recess formed on an insulating layer with volatile solution. CONSTITUTION:A recess formed by photolithographic technique on a semiconductor layer is cleaned with pure water, is then dried, is then cleaned with volatile solution such as xylene or the like, thereby removing a residue. It is then post-treated with butyl acetate. When thus cleaned, the residue in the previous step can be removed, and no deformation is produced at the resist, thereby performing an accurate patterning. |
