| 摘要 |
PURPOSE:To contrive to enhance integration of a semiconductor device by a method wherein a P<+> type impurity region on a semiconductor substrate of the N<+> type capacitor part is made to protrude by self-alignment to the transfer electrode side in relation to an electrode layer of the capacitor part. CONSTITUTION:The capacitor part 10 and the transfer electrode part 20 of MIS structure are formed on a semiconductor substrate 1, and electrode layers being the structural parts thereof are piled up partially interposing an insulating film 4 between them. The first N type impurity region 7 is formed on the surface of the substrate 1 of the N<+> type capacitor part 10. The second P<+> type impurity region is formed between the region 7 thereof and the P tye bulk part of the substrate, and the region 8 thereof is made to protrude by self-alignment to the electrode part 20 side in relation to the electrode layer 3 of the capacitor part 10. Accordingly enhancement of integration is enabled to attain. |
