| 摘要 |
PURPOSE:To stabilize a sheet resistace and form a sufficiently high-dense diffusion layer, by accumulating a certain amount of boron oxide on an oxide film formed before high-temperature deposit and driving in for a certain period of tome through the oxide film with the use of the accumulated boron. CONSTITUTION:An oxide film 5 of designated thickness is formed on a semiconductor substate by photo-etching method as a diffusion mask for diffusion layer formation. Next, steam oxidation is performed at designated temperatures for a set period of time. An oxide film 6 is formed on the silicon surface of an open-holed diffusion region. Next, a boron nitride thin film accumulated with boron oxide on the oxidated surface and the substrate are set on a quartz boat. Boron is deposited in a high-temperature nitrogen atmosphere furnace for a set period of time. At this time, boron oxide on the boron nitride surface is transferred on the substrate, and a boron glass layer 7 is formed. Only substrate in formation of the layer 7 is set in row on the quartz boat. A P-type diffusion layer 8 is formed in sufficiently high density, after heat treatment in nitrogen and oxigen atmosphere of high temperature for a set period of time. |
