Method of fabricating finely patterned photoresist films on a substrate

摘要

The invention relates to a method of producing very finely patterned photoresist layers on a substrate surface by a special combination of a photoresist composition with a developer. The developer is used to develop the latent image in the photoresist film after exposure to actinic radiation through an image pattern. The serious problem of swelling of the image pattern lines of the photoresist can be minimised by the developer solvent. The best results are achieved by using a photoresist composition based on a polymer of methyl isopropenyl ketone as basic polymer and an azide compound as photosensitive component, and a developer solvent selected from ketone compounds, nitroparaffin compounds and monoalkyl ethers of polyhydric alcohols such as ethylene glycol or corresponding acetates.