VORRICHTUNGSTEIL AUS SILIZIUMNITRID ZUM ZIEHEN VON EINKRISTALLINEM SILIZIUM UND VERFAHREN ZU SEINER HERSTELLUNG.

摘要

A device made of silicon nitride for producing silicon single crystal from melted silicon by the pullup process using a seed crystal, wherein at least a portion of the device in contact with the melted silicon is constituted by a layer of silicon nitride precipitated from gasious phase and having a smooth surface of 400 mu m or below in Hmax. …A method for producing the above device, wherein a crystalline silicon nitride layer is deposited on at least the inner or outer surface of a base member by the CVD process, and then the deposited surface of the silicon nitride layer is smoothed by a mechanical or a chemical process.