SEMICONDUCTOR DEVICE WITH IMPROVED PASSIVATION FILM AND PROCESS OF FABRICATION THEREOF

摘要

For enhancement of device stability, there is disclosed a semiconductor device fabricated on a semiconductor substrate (1) comprising a) source and drain regions (3 and 4) formed in a surface portion of the semiconductor substrate and spaced from each other by a channel region, b) a gate insulating film (5) formed on the channel region, c) a gate electrode structure (6 and 7) formed on the gate insulating film, and d) a passivation film (12) of an insulating material covering the gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5 x 10<2><1> per cm<3>, and the unstable hydrogen-bonded-silicons are decreased in number so that the semiconductor device only have a decreased trap density which results in stable operation.