| 摘要 |
PURPOSE:To reduce the band gap of an i layer and to improve short-circuiting current density by laminating p-type, i-type, and n-type semiconductor layers on a substrate, applying pulsed light to the semiconductor layers, and then performing plasma treatment inside hydrogen atmosphere after applying the pulsed light. CONSTITUTION:A transparent conductive film 2 and a p-layer 3a, an i-layer 3b, and an n-layer 3c as semiconductor layers 3, and a metal layer 4 are laminated successively on a substrate 1. Application of pulsed light is limited to a moment immediately after the formation of the i layer 3b or immediately after the formation of the n-layer 3c. Then, 10musec or less is desirable as a peak half-value width out of pulsed light conditions, considering the thermal damage which the transparent conductive film 2 and the p-layer 3a receive. An energy density differs depending on the wavelength. However, it is desirable to be within a range of 1mJ/cm<2>-500mJ/cm<2> the case of a wavelength of 400nm or less. Further, it is desirable that the optimum substrate temperature when the pulsed light is applied should be within a range of -150 deg.C-350 deg.C depending on the energy density and wavelength of the pulsed light. |
