发明名称 |
EXPOSURE, MASK, EXPOSURE MASK SUBSTRATE AND ITS PRODUCTION |
摘要 |
<p>PURPOSE:To provide a highly accurate exposure mask and its production by which plural semitransparent films can be easily formed without defects or deposition of dust and the production process can be simplified. CONSTITUTION:This exposure mask has a mask pattern formed on a light- transmitting substrate. The mask pattern contains a semitransparent film pattern in which the optical length for the exposure light differs from that in the transparent part of the light-transmitting substrate 10 by a specified amount. This semitransparent film pattern consists of laminated layers of a Si layer 11 and a Si2N4 layer 12, each having the optimum film thickness. These layers contain the same element (Si) but have different compsn.</p> |
申请公布号 |
JPH0683034(A) |
申请公布日期 |
1994.03.25 |
申请号 |
JP19930048301 |
申请日期 |
1993.03.09 |
申请人 |
TOSHIBA CORP |
发明人 |
ITO SHINICHI |
分类号 |
G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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