METHOD OF UNIFORMING THICKNESS OF SILICON ON SUBMICRON SILICON LINE AND POLYSILICON LINE

摘要

PROBLEM TO BE SOLVED: To obtain silicide with small sheet resistivity for polysilicon fine line by heat-treating silicide material at specific temperature after forming nitride material by reacting a titanium layer on polysilicon line with the polysilicon layer and depositing a heat-treating film on this silicide material. SOLUTION: A source/drain region 18 in a semiconductor main part 10 is positioned adjacent to the side of a polysilicon gate 12. A titanium layer 20 is depositied on the above structure, and a reactive coating layer 22 is deposited on this titanium layer 22. Next, a silicide material 32 is formed by reacting the titanium layer 20 in atmosphere containing N2 . The silicide material 32 is formed on the silicon, or on the source/drain region 18 and the polysilicon gate 12. Next, the reactive coating layer 22 is removed, a heat-treating film layer 36 is deposited on the silicide material 32 and the silicide is heat-treated. The silicide heat-treating process is performed at temperature more than 600 deg.C higher than that of the silicide reacting step.