发明名称 Semiconductor structure having backside probe points for direct signal access from active and well regions
摘要 A semiconductor structure that includes an electrically conductive probe that extends from the back side of an integrated circuit to a selected region within the substrate. The structure includes a substrate having first and second surfaces. An active region is disposed in the substrate, and an electrically conductive probe extends from the first surface of the substrate to the active region. Probes can also be constructed to connect one to another and with well regions within the substrate.
申请公布号 US6720641(B1) 申请公布日期 2004.04.13
申请号 US19980166656 申请日期 1998.10.05
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BIRDSLEY JEFFREY DAVID;RING ROSALINDA M.;GORUGANTHU RAMA R.
分类号 H01L23/48;H01L23/58;H01L29/417;(IPC1-7):H01L29/40 主分类号 H01L23/48
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