发明名称 THROUGH INSULATION SUPPORT
摘要 <p>PROBLEM TO BE SOLVED: To reduce the height of an insulation support by a method, wherein an electrode which is buried in an insulation layer formed on the opening part of the insulation support and to which a main circuit conductor is fixed has recessed part at the approximately central part of its surface facing the other main circuit conductor and is integrally molded with the insulation layer. SOLUTION: An electrode 13 is buried in the upper part of a reverse-U shaped insulator 12, and a recess 13a is formed at the centeral part of the electrode 13. An opening part 14a is formed in an insulation layer 14 and a main circuit conductor 15b is installed through the opening part 14a, and both the ends are fixed to an insulator base 16. A main circuit conductor 15a is fixed to the electrode 13. As the recess 13a is formed at the approximately central part of the buried electrode 13, the electric field intensity E on the surface of the insulating layer 14 is relieved. As the position where the maximum electric field intensity exists on the reverse-U shaped insulator 12 is the position where the main circuit conductor 15b faces the electrode 13, the field intensity is relieved, by widening the distance between the electrodes on the shortest line.</p>
申请公布号 JPH1094115(A) 申请公布日期 1998.04.10
申请号 JP19960245963 申请日期 1996.09.18
申请人 TOSHIBA CORP 发明人 YOSHIDA TETSUO;MIYAGAWA MASARU;HORIKIRI KAZUHITO
分类号 H02B1/20;H01B17/14;H02B13/075;(IPC1-7):H02B1/20 主分类号 H02B1/20
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