| 摘要 |
<p>A p-type semiconductor composed basically of an Ib-IIIb-Vib2 group compound semiconductor (especially CuInS2) which is improved in carrier concentration and has advantages in manufacture and performance. In order to obtain the p-type semiconductor mentioned above, p-type CuInS2 is formed by adding both P (p-type impurity) and Sn (n-type impurity) to CuInS2. The carrier concentration of the p-type semiconductor is 5x1017 cm-3 which is larger than the value (5x1016 cm-3) obtained when P and In are added or another value (3x1015 cm-3) obtained when only P is added. A layered thin film solar battery characterized by a glass substrate (2), an Mo electrode (1), a p-type semiconductor layer (3), an n-type semiconductor layer composed of a CdS layer (4), and an ITO electrode (5) is manufactured by using the CuInS¿2? layer containing P and Sn as the p-type semiconductor layer (3). It is confirmed that the conversion efficiency of the solar battery is as high as 12 %.</p> |
