| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for correcting patterns of photomasks capable of correcting the patterns of the photomasks for forming the patterns of a photoresist with high accuracy at high speed, the photomasks corrected by this method and a pattern corrector of the photomasks. SOLUTION: The pattern data of the plural photomasks are integrally taken in (S1) and are subjected to the correction for the light proximity effect within the photoresist relating to the entire region of the respective photomasks (S2). The ground surface correction regions to be subjected to the correction for the light proximity effect by the ground surface structures and materials of the photoresist are automatically extracted from the entire region of the respective photomasks (S39, S4) and only the ground surface correction regions are subjected to the correction for the ground surface structures and materials of the photoresist (S5). The development correction regions to be subjected to the correction for the regression of the ends and pattern deformation at the time of the photoresist development are automatically extracted from the entire region of the respective photomasks (S8, S9) and only the development correction regions are subjected to the correction for the development of the photoresist (S10). |
