Barrier layer structure, especially for copper interconnections in a VLSI

摘要

A barrier layer structure includes a silicon-containing first barrier layer (34) on the sides of an opening and the surrounding region of a dielectric layer (32). A barrier layer structure comprises a dielectric layer (32) with an opening (33) for exposing a conductive layer (31) on a semiconductor substrate (30), a silicon-containing first barrier layer (34) on the sides of the opening and the surrounding region, and a second barrier layer on the first barrier layer. Independent claims are also included for the following: (i) a process for forming a barrier layer; and (ii) a barrier layer formation process which is applicable to inlay processes.