| 摘要 |
A crystal growing apparatus comprises a solid-state device (42) having a region (42a) where valence electrons are so controlled that the density of holes or electrons in the surface portion is controlled according to the environment of a solution (43) containing a polymer compound, a pair of opposed electrodes (44a, 44b) on both sides of the space above the region (42a), and electrical insulating members (46a, 46b) supporting the electrode s (44a, 44b). The region (42a) is an impurity region formed on a silicon semiconductor substrate. A crystal growing method comprises applying an electric field to a solution (43) through opposed electrodes (44a, 44b). A crystal of a polymer compound is grown in the solution (43) in the electric field in an electric state given to the surface of a region (42a). |
