| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve step coverage between a cell region and a peripheral region. CONSTITUTION: After sequentially forming and selectively removing a first HLD layer(58), a nitride layer(59) and a second HLD layer(60) on a substrate(51) having transistors, a surface of a cell region is exposed. After forming a first amorphous layer(62) and a third HLD layer(63), a portion of the first amorphous silicon layer(62) is exposed by selectively etching the third HLD layer(63). A second amorphous silicon layer(65), the third HLD layer(63), the first amorphous silicon layer(62) and the second HLD layer(60) are selectively etched to expose the surface of the nitride layer(59). By removing the remained third and second HLD layers(63,60), a storage node of stacked pin structure is formed. Then, a plate layer(68) is formed by sequentially depositing a dielectric film(67) and an amorphous silicon layer.
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