| 摘要 |
<p>PROBLEM TO BE SOLVED: To inexpensively manufacture a p-n junction-type solar cell with high optoelectric conversion efficiency, using a crystal system semiconductor by reducing the number of the manufacturing processes. SOLUTION: A diffusion film 11 containing impurity is formed on the surface of the non-electrode part of a crystal system semiconductor (semiconductor substrate 1), then the semiconductor is subjected to thermal diffusion in an atmosphere of diffusion gas containing the impurity after forming the film 11, a lightly-doped layer (n+ layer 2a) based on the diffusion film of the impurity from the film 11 is formed at a non-electrode part, and at the same time, a heavily-doped layer (n++ layer 2b) based on the diffusion of the impurity from the diffusion gas is formed at an electrode part.</p> |
