| 摘要 |
PROBLEM TO BE SOLVED: To prevent element deterioration during wire-bonding and to achieve high integration and an increase of memory by packaging semiconductor chips into one, while electrically connecting them. SOLUTION: A 1st master and slave semiconductor chip 22 is formed on a 1st island 20, a 2nd semiconductor chip 24 is formed on a 2nd island 21, and a ridge 31 is formed between 1st and 2nd semiconductor chips 22 and 24. Then the semiconductor chip side is wire-bonded by ball bonding, and the side of the bridge 31 is wire-bonded by stitch bonding. Furthermore, the 1st master and slave semiconductor chip is mounted to achieve the high integration and increase in memory. |
