CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal growth method by which a buffer layer and a nitride semiconductor crystal can be grown on a sapphire substrate without causing any lattice defect or dislocation in the crystal, any layer-layer interface roughness. SOLUTION: This crystal growth method comprises an AlN film (buffer layer) growth process for irradiating the surface of a sapphire substrate with atomic nitrogen produced by a plasma method to form an AlN film on the surface of the sapphire substrate. The sapphire substrate is irradiated with such atomic nitrogen while maintaining the temperature of the substrate at <=200 deg.C. Further, a nitride semiconductor crystal growth process using the buffer layer is provided.