| 摘要 |
Disclosed is a CVD apparatus for fabricating thin films capable of enhancing the uniformity, minimizing the formation of reaction products or by-products in the chamber, having a long cleaning ylcle of the chamber and increasing the yield of semiconductor fabricating processes. The CVD apparatus for fabricating thin films comprises a moveable shower head unit, a double heater unit and a vacuum channel unit, wherein the moveable shower head unit comprises a first shower head having a plate for secondly introducing the reaction gas from the first shower head after a predetermined period, the double heater unit comprises an inner heater and an outer heater for controlling temperature independently, and the vacuum channel unit comprises an inner vacuum plate unit having a dual nitrogen gas slit for preventing the nitrogen gas of the lower side from flowing into the upper side, a vacuum channel loop unit for preventing the gas introduced into a vacuum channel from flowing into the upper side of the heater; and a vacuum guide unit having a vacuum guide of a three-stage slope shape forming the flow passage of the introduced gas into a radial shape. |
