发明名称 |
Oxide films containing titanium |
摘要 |
Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.
|
申请公布号 |
US2006219157(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20050317656 |
申请日期 |
2005.12.22 |
申请人 |
|
发明人 |
RAHTU ANTTI;MATERO RAIJA;LESKELA MARKKU;RITALA MIKKO;HATANPAA TIMO;HANNINEN TIMO;VEHKAMAKI MARKO |
分类号 |
C30B1/00;C30B3/00;C30B5/00;C30B28/02 |
主分类号 |
C30B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|