发明名称 |
Semiconductor device arrangement, has temperature measuring arrangement with temperature measuring resistor which is formed over part of semiconductor zone, where evaluation circuit is coupled to temperature measuring resistor |
摘要 |
<p>The arrangement has a trench-transistor with a gate electrode (11), a source-zone (6), a drain-zone (2) and a body-zone (5), where the body-zone is arranged in a semiconductor zone of conduction type. A temperature measuring arrangement has a temperature measuring resistor (13), which is formed over a part of the semiconductor zone, where an evaluation circuit is coupled to the temperature measuring resistor.</p> |
申请公布号 |
DE102006005033(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
DE20061005033 |
申请日期 |
2006.02.03 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SANDER, RAINALD;ZUNDEL, MARKUS |
分类号 |
H01L23/62;G01K7/01;H01L27/06;H01L29/78 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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