发明名称 Semiconductor device arrangement, has temperature measuring arrangement with temperature measuring resistor which is formed over part of semiconductor zone, where evaluation circuit is coupled to temperature measuring resistor
摘要 <p>The arrangement has a trench-transistor with a gate electrode (11), a source-zone (6), a drain-zone (2) and a body-zone (5), where the body-zone is arranged in a semiconductor zone of conduction type. A temperature measuring arrangement has a temperature measuring resistor (13), which is formed over a part of the semiconductor zone, where an evaluation circuit is coupled to the temperature measuring resistor.</p>
申请公布号 DE102006005033(A1) 申请公布日期 2007.08.30
申请号 DE20061005033 申请日期 2006.02.03
申请人 INFINEON TECHNOLOGIES AG 发明人 SANDER, RAINALD;ZUNDEL, MARKUS
分类号 H01L23/62;G01K7/01;H01L27/06;H01L29/78 主分类号 H01L23/62
代理机构 代理人
主权项
地址