发明名称 |
Solid-state imaging device and method of manufacturing solid-state imaging device |
摘要 |
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
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申请公布号 |
US2007215971(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20070723241 |
申请日期 |
2007.03.19 |
申请人 |
SONY CORPORATION |
发明人 |
YAMAMOTO YUICHI;IWAMOTO HAYATO |
分类号 |
H01L31/0232;H01L27/14;H01L27/146;H01L27/148;H01L31/10 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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