| 摘要 |
A vertical semiconductor power switch has a semiconductor body having a first surface and a second surface. At least one anode and one control electrode are positioned on the first surface and at least one cathode is positioned on the second surface. The cathode comprises a multi-layer contact structure which comprises an inner contact layer positioned directly on the second surface of the semiconductor body, and an outermost layer consisting essentially of a Ni-alloy.
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